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DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ252; BFQ252A PNP video transistors
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02
Philips Semiconductors
Product specification
PNP video transistors
FEATURES * High breakdown voltages * Low output capacitance * Optimum temperature profile * Excellent reliability properties. APPLICATIONS * Buffer/driver in high-resolution colour graphics monitors. PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. PINNING
page
BFQ252; BFQ252A
Top view
1
2
3
MBC077 - 1
Fig.1
Simplified outline (SOT32; TO-126).
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ252 BFQ252A VCER collector-emitter voltage BFQ252 BFQ252A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ252 BFQ252A Note 1. Ts is the temperature at the soldering point of the collector pin. Ts 115 C; note 1 IC = -50 mA; VCE = -10 V; Tamb = 25 C IC = -50 mA; VCE = -10 V; f = 100 MHz; Tamb = 25 C RBE = 100 - - - - 20 1 0.8 - - - - 30 1.3 1.2 -95 -110 -300 3 - - - GHz GHz V V mA W open emitter - - - - -100 -115 V V CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ252 BFQ252A VCEO collector-emitter voltage BFQ252 BFQ252A VCER collector-emitter voltage BFQ252 BFQ2552A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 115 C; note 1; see Fig.3 open collector RBE = 100 open base CONDITIONS open emitter
BFQ252; BFQ252A
MIN. - - - - - - - - - -65 -
MAX. -100 -115 -65 -95 -95 -110 -3 -300 3 +150 175 V V V V V V V
UNIT
mA W C C
CONDITIONS
VALUE 20
UNIT K/W
thermal resistance from junction to soldering point Ts 115 C; note 1
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO BFQ252 BFQ252A V(BR)CEO collector-emitter breakdown voltage IC = -10 mA; IB = 0 BFQ252 BFQ252A V(BR)CER collector-emitter breakdown voltage IC = -10 mA; RBE = 100 BFQ252 BFQ252A V(BR)EBO ICES ICBO hFE Ccb fT emitter-base breakdown voltage collector-emitter cut-off current collector-base cut-off current DC current gain collector-base capacitance transition frequency BFQ252 BFQ252A IE = -0.1 mA; IC = 0 IB = 0; VCE = -50 V IE = 0; VCB = -50 V IC = -50 mA; VCE = -10 V; Tamb = 25 C; see Fig.4 IC = ic = 0; VCB = -10 V; f = 1 MHz; Tamb = 25 C; see Fig.5 PARAMETER collector-base breakdown voltage CONDITIONS IC = -0.1 mA; IE = 0
BFQ252; BFQ252A
MIN. -100 -115 -65 -95 -95 -110 -3 - - 20 -
TYP. - - - - - - - - - 30 2.5
MAX. UNIT - - - - - - - -100 -20 - - pF V V V V V V V A A
IC = -50 mA; VCE = -10 V; f = 100 MHz; Tamb = 25 C; see Fig.6 1 0.8
1.3 1.2
- -
GHz GHz
handbook, halfpage
-400
MBB893
handbook, halfpage
4
MBB895
IC (mA) -300
Ptot (W) 3
-200
2
-100
1
0 0
-20
-40
-60 -80 VCEO (V)
0 0 50 100 150 Ts (oC) 200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
PNP video transistors
BFQ252; BFQ252A
handbook, halfpage
50
MBB449
MBB892
handbook, halfpage
6
hFE
Ccb (pF)
5 40 4
3 30 2
20 0
-100
-200
IC (mA)
-300
1 0
-10
-20
-30 -40 VCB (V)
VCE = -10 V; Tamb = 25 C.
f = 1 MHz; Tamb = 25 C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector-base capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
2.0
MBB448
fT (GHz)
1.5 BFQ252
1.0
BFQ252A
0.5 0
-50
-100
IC (mA)
-150
VCE = -10 V; f = 100 MHz; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current; typical values.
1997 Oct 02
5
Philips Semiconductors
Product specification
PNP video transistors
PACKAGE OUTLINE
BFQ252; BFQ252A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1 P D
L1
L
1 bp
2 wM
3 c Q e e1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.7 2.3 bp 0.88 0.65 c 0.60 0.45 D 11.1 10.5 E 7.8 7.2 e 4.58 e1 2.29 L 16.5 15.3 L1(1) max 2.54 Q 1.5 0.9 P 3.2 3.0 P1 3.9 3.6 w 0.254
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 REFERENCES IEC JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04
1997 Oct 02
6
Philips Semiconductors
Product specification
PNP video transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BFQ252; BFQ252A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 02
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127027/00/02/pp8
Date of release: 1997 Oct 02
Document order number:
9397 750 02887

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